| Models |
NEF-T10RD |
NEF-M5RD |
NEF-R50 |
| Detection |
Through beam |
Polarized Retro-reflection |
Diffuse reflection |
| Range
(Max.) |
10m |
0.03 to 5m * |
1m |
| Power
supply |
DC 12 - 24V ± 10%, Ripple 10% (Max.) |
Current
consumption |
Trns.
: 30mA(Max.)
Rcvr. : 25mA(Max.) |
40mA
(Max.) |
Output
mode |
NPN/PNP
Open collector
NPN: Sink Current 100mA(DC 30V) Max., PNP:
Source Current 100mA(DC 30V) Max. |
| Operating
mode |
Dark-ON |
Light-ON |
| Response
time |
5ms |
| Hysteresis |
- |
10%
Max. |
| Light
source |
Red
LED (700nm) |
Infrared
LED (880nm) |
| Indicators |
Trns.
: :Power (Red)
Rcvr. : :Operation (Orange)
:Stability
(Green) |
Operation
(Orange)
Stability (Green) |
| Sensitivity
adjustment (SENS) |
Built-in
potentiometer |
| Circuit
protection |
Short
circuit protection built-in |
| Materials |
Case |
Heat
resistance ABS |
| Lens |
Acrylic |
| Connection |
Flying
lead (ø6)
Through beam Trns. 0.3mm2 × 2cores 2m (Gray)
Through beam Rcvr., Polarized Retro-reflection,
Diffuse reflection 0.3mm2 × 4cores 2m (Black) |
| Weight |
Trns.
: 130g
Rcvr. : 150g |
150g |
| Option |
- |
Reflector
K-7 |
- |
| Adjustment
driver, Mounting bracket |
| Others |
*
: Reflector K-7 is used. |
DC
POWER SUPPLY PHOTO SENSORS
No
influence for High frequency 
